Netac 16GB No Heatsink (1x16GB) DDR4 3200MHz SODIMM Laptop Memory

34.07

Netac 16GB No Heatsink (1 x 16GB) DDR4 3200MHz SODIMM System Memory Netac Unbuffered Small Outline DDR4 SDRAM DIMMs (Unbuffered Small Outline Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use DDR4 SDRAM devices. Each 260-pin DIMM uses gold contact fingers. The SDRAM Unbuffered SODIMM is intended for use as main memory when installed in systems such as mobile personal computers. Features – Power Supply: VDD=1.2V (1.14V to 1.26V) – VDDQ = 1.2V (1.14V to 1.26V) – VPP – 2.5V (2.375V to 2.75V) – VDDSPD=2.25V to 3.6V – Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals – Low-power auto self refresh (LPASR) – Data bus inversion (DBI) for data bus – On-die VREFDQ generation and calibration – On-board I2C serial presence-detect (SPD) EEPROM – Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) – Selectable BC4 or BL8 on-the-fly (OTF) – Databus write cyclic redundancy check (CRC) – Temperature controlled refresh (TCR) – Command/Address (CA) parity – Per DRAM Addressability is supported – 8 bit pre-fetch – Fly-by topology – Command/Address latency (CAL) – Terminated control command and address bus – PCB: Height 1.18″” (30.00mm) – Gold edge contacts – RoHS Compliant and Halogen-Free Memory Capacity 16GB (1 x 16GB) Memory Type DDR4 Module Type SODIMM Memory Speed DDR4-3200MHz Pin Configuration 260-pin Registered/Unbuffered Unbuffered Error Correction Non-ECC CL-tRCD-tRP-tRAS 22-22-22-52 Heat Sink / Working Voltage 1.2v

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Netac 16GB No Heatsink (1 x 16GB) DDR4 3200MHz SODIMM System Memory Netac Unbuffered Small Outline DDR4 SDRAM DIMMs (Unbuffered Small Outline Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use DDR4 SDRAM devices. Each 260-pin DIMM uses gold contact fingers. The SDRAM Unbuffered SODIMM is intended for use as main memory when installed in systems such as mobile personal computers. Features – Power Supply: VDD=1.2V (1.14V to 1.26V) – VDDQ = 1.2V (1.14V to 1.26V) – VPP – 2.5V (2.375V to 2.75V) – VDDSPD=2.25V to 3.6V – Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals – Low-power auto self refresh (LPASR) – Data bus inversion (DBI) for data bus – On-die VREFDQ generation and calibration – On-board I2C serial presence-detect (SPD) EEPROM – Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) – Selectable BC4 or BL8 on-the-fly (OTF) – Databus write cyclic redundancy check (CRC) – Temperature controlled refresh (TCR) – Command/Address (CA) parity – Per DRAM Addressability is supported – 8 bit pre-fetch – Fly-by topology – Command/Address latency (CAL) – Terminated control command and address bus – PCB: Height 1.18″” (30.00mm) – Gold edge contacts – RoHS Compliant and Halogen-Free Memory Capacity 16GB (1 x 16GB) Memory Type DDR4 Module Type SODIMM Memory Speed DDR4-3200MHz Pin Configuration 260-pin Registered/Unbuffered Unbuffered Error Correction Non-ECC CL-tRCD-tRP-tRAS 22-22-22-52 Heat Sink / Working Voltage 1.2v

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